Solid state electrolyte memory cell has barrier layer between ion conductive material of variable resistance and the cathode

摘要

A solid-state electrolyte memory cell comprises a memory region (S) between anode (A) and cathode (K) on an ion-conductive material (I) having regions of different and controllable variable conductance (G). A barrier layer (B) between the ion-conductive and cathode layers suppresses a short, low-resistance error or hard write condition.