发明名称 |
METHOD FOR PRODUCTION OF A VERY THIN LAYER WITH THINNING BY MEANS OF INDUCED SELF-SUPPORT |
摘要 |
<p>The invention relates to a method for production of a thin layer of a first material on a substrate of a second material, called the final substrate, comprising the following steps: fixing a thin layer of a first material to the final substrate along an interface, implanting gaseous materials in the thin layer of the first material to generate a defining fragile zone, between the fragile zone and the interface of said thin layer, depositing a third layer on the thin layer of a first material, called the self-support layer and fracturing, within the structure comprising the final substrate, the thin layer of first material and the layer of third material at the fragile zone to provide the substrate supporting the thin layer.</p> |
申请公布号 |
WO2004112125(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
WO2004FR50212 |
申请日期 |
2004.06.03 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;MORICEAU, HUBERT;LAGAHE, CHRYSTELLE;BATAILLOU, BENOIT |
发明人 |
MORICEAU, HUBERT;LAGAHE, CHRYSTELLE;BATAILLOU, BENOIT |
分类号 |
H01L21/762;(IPC1-7):H01L21/762;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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