发明名称 |
Multi-level memory device and methods for programming and reading the same |
摘要 |
A multilevel memory core includes a word line and a bit line. The multilevel memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to define multiple levels for storage where each of the multiple levels for storage is associated with a corresponding threshold voltage. Methods for reading the multilevel memory core also are described.
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申请公布号 |
US2004257854(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030465012 |
申请日期 |
2003.06.18 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN YI CHOU;LU CHIH-YUAN |
分类号 |
G11C13/00;G11C11/56;G11C16/02;G11C16/26;H01L27/10;H01L27/105;H01L45/00;(IPC1-7):G11C11/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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