Process for producing silicon carbide sinter jig for use in semicondutor production and silicon carbide sinter jig obtained by the process

摘要

The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is heated at a temperature rising rate of 3 to 5° C./min up to heating treatment temperature selected in the range of 2200 to 2300° C. under an argon atmosphere, kept at the same heating treatment temperature for 3 hours, and cooled at a temperature lowering rate of 2 to 3° C./min down to 1000° C.