DC AMPLIFIER AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF
摘要
<p>A rectangular parallelepiped protrusion part (21) having a height HB and a width WB is formed on a silicon substrate, and a gate oxide film is formed on portions of the top and side wall surfaces of the protrusion part (21). A source and a drain are formed on the two opposite sides of a gate electrode (26), thereby forming a MOS transistor. This MOS transistor is used to configure a DC amplifier. The DC amplifier has a differential amplifier circuit comprising MOS transistors (61,62). In this way, the DC amplifier can exhibit a greater gain.</p>
