Method for heat treating a semiconductor wafer

摘要

A method for heat treatment of a semiconductor wafer placed on a support. The method includes subjecting the wafer to a heat treatment with a slow temperature rise from an initial temperature to a treatment ending temperature, and minimizing slip lines that would otherwise result in the wafer from the heat treatment by introducing at least one temperature plateau of constant temperature and of predetermined duration in the heat treatment before reaching the treatment ending temperature. The method reduces the temperature gradients on the wafer to minimize slip lines in the wafer resulting from the heat treatment.