发明名称 |
Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure |
摘要 |
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
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申请公布号 |
US2004258932(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040893263 |
申请日期 |
2004.07.19 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
YEH CHING-FA;LEE YUEH-CHUAN;HSU CHIH-CHUAN;WU KWO-HAU;WANG SHUO-CHENG |
分类号 |
H01L21/312;H01L21/316;(IPC1-7):B32B9/04 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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