发明名称 TRANSISTOR STRUCTURE WITH THERMAL PROTECTION
摘要 A new transistor structure with thermal protection is provided. A type of the new transistor structure of the present invention includes a main depletion-mode NMOSFET and a control PMOSFET, with the drain terminal of the control PMOSFET connected to the gate terminal of the main NMOSFET and the gate terminal of the control PMOSFET connected to a thermal protection unit. The two-MOSFET structure as a whole emulates a normal NMOSFET. The source terminal of the control PMOSFET that's not connected to the gate terminal of the main NMOSFET acts as the gate terminal of the new transistor structure, and the drain and source terminals of the new transistor structure are the drain and source terminals of the main NMOSFET. The thermal protection unit prevents thermal failures of the MOSFETs of the new transistor structure by sensing heat, terminating current through and switching the two MOSFETs.
申请公布号 US2004257146(A1) 申请公布日期 2004.12.23
申请号 US20030463061 申请日期 2003.06.17
申请人 CHANG CHUNG-HSING 发明人 CHANG CHUNG-HSING
分类号 H03K17/08;H03K17/082;(IPC1-7):H03K17/687 主分类号 H03K17/08
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