SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor device including a plurality of kinds of semiconductor elements such as a transistor and a resistor are fabricated in a simple step. A semiconductor device manufacturing method comprises the steps of forming an element isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, depositing a silicon layer, forming a gate electrode and a resistive element by pattering, forming a side wall of the gate electrode, heavily doping a first active region with phosphorus and a second active region and a resistive element with p-type impurities by ion implantation, forming salicide blocking layer at 500°C or below, depositing a metal layer covering the salicide blocking layer, and selectively forming a metal silicide layer. The method further comprises the steps of forming a thick gate insulating film and a very thin gate insulating film, and performing implantation of ions of a first conductivity type not penetrating the thick gate insulating film and oblique implantation of ions of the opposite conductivity type penetrating also the thick gate insulating film before the formation of the side wall.