SWITCH CAPACITOR CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF
摘要
<p>A rectangular parallelepiped protrusion part (21) having a height HB and a width WB is formed on a silicon substrate, and a gate oxide film is formed on portions of the top and side wall surfaces of the protrusion part (21) to form a MOS transistor. P-channel and n-channel MOS transistors prepared as described above are connected in parallel to configure a switch of a switched capacitor circuit. In this way, the switched capacitor circuit can exhibit less leakage currents and less DC offsets.</p>
