发明名称 |
High-performance CMOS devices on hybrid crystal oriented substrates |
摘要 |
An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is provided. The method of forming the integrated structure includes providing a bonded substrate including at least a first semiconductor layer of a first crystallographic orientation and a second semiconductor layer of a second different crystallographic orientation. A portion of the bonded substrate is protected to define a first device area, while another portion of the bonded substrate is unprotected. The unprotected portion of the bonded substrate is then etched to expose a surface of the second semiconductor layer and a semiconductor material is regrown on the exposed surface. Following planarization, a first semiconductor device is formed in the first device region and a second semiconductor device is formed on the regrown material.
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申请公布号 |
US2004256700(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030250241 |
申请日期 |
2003.06.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;GUARINI KATHRYN W.;IEONG MEIKEI;NARASIMHA SHREESH;RIM KERN;SLEIGHT JEFFREY W.;YANG MIN |
分类号 |
H01L21/762;H01L21/8238;H01L21/84;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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