发明名称 |
Electrically tunable quantum dots and methods for making and using for same |
摘要 |
A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers
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申请公布号 |
US2004256612(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030642095 |
申请日期 |
2003.08.15 |
申请人 |
MOHSENI HOOMAN;CHAN WINSTON KONG |
发明人 |
MOHSENI HOOMAN;CHAN WINSTON KONG |
分类号 |
H01L21/335;H01L29/12;H01L29/775;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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