发明名称 |
ANGLED IMPLANT FOR TRENCH ISOLATION |
摘要 |
A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current. |
申请公布号 |
WO2004081989(A3) |
申请公布日期 |
2004.12.23 |
申请号 |
WO2004US07510 |
申请日期 |
2004.03.12 |
申请人 |
MICRON TECHNOLOGY, INC.;RHODES, HOWARD, E.;MOULI, CHANDRA |
发明人 |
RHODES, HOWARD, E.;MOULI, CHANDRA |
分类号 |
H01L;H01L21/00;H01L21/265;H01L21/76;H01L21/762;H01L21/768;H01L27/146;H01L31/062 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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