发明名称 |
SEMICONDUCTOR DIODE, ELECTRONIC COMPONENT, VOLTAGE SOURCE INVERTER AND CONTROL METHOD |
摘要 |
The invention relates to a semiconductor diode, an electronic component and to a voltage source inverter. According to the invention, the semiconductor (9) diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses. |
申请公布号 |
WO2004077573(A3) |
申请公布日期 |
2004.12.23 |
申请号 |
WO2004EP01541 |
申请日期 |
2004.02.18 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;BAKRAN, MARK-MATTHIAS;ECKEL, HANS-GUENTER |
发明人 |
BAKRAN, MARK-MATTHIAS;ECKEL, HANS-GUENTER |
分类号 |
H01L29/36;H01L29/739 |
主分类号 |
H01L29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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