Semiconductor arrangement has integrated structure surrounded by protective structure to prevent diffusion of minority carriers and a contact to the substrate

摘要

A semiconductor arrangement in a doped substrate (S) comprises an integrated structure with a surrounding protective arrangement that prevents minority carrier diffusion in or out and has a substrate contact to convey an electric potential between the integrated and protective structures that is wider than the integrated structure. An independent claim is also included for a production process for a substrate contact as above.