<p>A detection circuit for detecting the output power of a power amplifier comprises a first current mirror transistor (Ti 1) having a base, which is connectable to a power transistor (T10), and a collector, a RF detection means (RF-det) for detecting the RF current flowing through the current mirror transistor (T11). Said RF detection means (RFdet) is connected to the collector of said first current mirror transistor (T11). Said detection circuit further comprises a biasing means (bias-RF-det) for biasing said RF detection means (RF-det), wherein said biasing means is connected to said collector of said first current mirror (T11) and said RF detection means (RF-det).</p>
