TRENCH-GATE SEMICONDUCTOR DEVICES

摘要

A trench-gate semiconductor device is provided which includes a semiconductor body (10) comprising an active area (2) surrounded by an edge termination region (4). The semiconductor body defines a plurality of gate trenches (20) arranged in a stripe geometry across the active area (2) and groove (41) parallel to and between the gate trenches (20) extending through the source region (13) in the channel-accomodating region (15). A moated source configuration is employed to enable the source electrode (23) to contact the channel-accommodating region (15) of the device. An end trench portion (51) is provided towards each end of the gate trenches (20), beyond the ends (41a) of the grooves (41), which extends transversely with respect to the gate trenches and through the source region (13) to disconnect electrically the portions of the source region on opposite sides thereof. This prevents the formation of a parasitic transistor at the edges of the source and channel-accommodating regions (13,15).