STRUCTURE OF THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, PARTICULARLY REGARDING TO IMPROVING THE MOBILITY OF THIN FILM TRANSISTOR

摘要

PURPOSE: A structure of a thin film transistor and a method for manufacturing the same are provided to improve the mobility of a thin film transistor by minimizing an influence of an amorphous silicon semiconductor layer. CONSTITUTION: A gate electrode(110) is formed on a substrate(101), wherein second areas(110B) of both sides are thicker than a first area(110A) of a center. A gate insulating layer(130) is formed on the substrate in association with winding of the gate electrode. A semiconductor layer(132) is formed on the gate insulating layer at the first area of the gate electrode, and extend to an upper side of the gate insulating layer of the second areas. Ohmic contact layers(134A,134B) are formed on the semiconductor layer and the gate insulating layer formed at the second areas of the gate electrode. A source electrode and a drain electrode(112) are formed on the ohmic contact layers.