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发明名称
Reduction of resist defects
摘要
Photoresist patterning defects, such as "kissing" defects, can be reduced by rinsing semiconductor wafers in a surfactant-containing rinse, instead of deionized water, at the end of the development process.
申请公布号
US2004259371(A1)
申请公布日期
2004.12.23
申请号
US20030464193
申请日期
2003.06.18
申请人
LU ZHIJIAN
发明人
LU ZHIJIAN
分类号
G03F7/26;G03F7/32;G03F7/40;H01L21/302;(IPC1-7):H01L21/302
主分类号
G03F7/26
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