发明名称 Reduction of resist defects
摘要 Photoresist patterning defects, such as "kissing" defects, can be reduced by rinsing semiconductor wafers in a surfactant-containing rinse, instead of deionized water, at the end of the development process.
申请公布号 US2004259371(A1) 申请公布日期 2004.12.23
申请号 US20030464193 申请日期 2003.06.18
申请人 LU ZHIJIAN 发明人 LU ZHIJIAN
分类号 G03F7/26;G03F7/32;G03F7/40;H01L21/302;(IPC1-7):H01L21/302 主分类号 G03F7/26
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