发明名称 PHOTODIODE
摘要 Disclosed is a photodiode comprising a semiconductor substrate (12) that is provided with a photosensitive area (18, 24) which encompasses a space charge region (18) generating a portion of a diffusion current and a diffusion region (24) generating another portion of a diffusion current, and an insulating device (20) which at least partly delimits the diffusion region relative to an adjacent surrounding area of the semiconductor substrate. In order to lower the reduction in the photodiode bandwidth caused by the diffusion current blurring the response of the photodiode, the semiconductor substrate is provided with an insulating device which delimits the diffusion region relative to the surrounding semiconductor substrate, thereby reducing the number of charge carriers that contribute to the diffusion rate because the diffusion region in which the diffusing charge carriers are produced is reduced and because the diffusing charge carriers produced in the reduced diffusion region are sucked up by the insulating device such that said diffusing charge carriers do not contribute to the photocurrent.
申请公布号 WO03100871(A3) 申请公布日期 2004.12.23
申请号 WO2003EP05378 申请日期 2003.05.22
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;HEHEMANN, INGO;KEMNA, ARMIN 发明人 HEHEMANN, INGO;KEMNA, ARMIN
分类号 H01L31/04;H01L27/144;H01L27/146;H01L27/15;H01L31/0352;H01L31/103 主分类号 H01L31/04
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