| 摘要 |
A ground layer (GND1) is provided between a first and a second wiring layer (LY1, LY2). A first transistor (Q1) provided at the first wiring layer (LY1) amplifies a supplied high-frequency signal. A second transistor (Q2) provided at the first wiring layer (LY1) amplifies the output signal of the first transistor. A first power supply line (ML1), which supplies power to the first transistor (Q1), is provided at the first wiring layer (LY1). A second power supply line (ML2), which supplies power to the second transistor (Q2), is provided at the second wiring layer (LY2). |
