DRAM memory storing charge at high density, has insulated nanotubes contacting electrode layer, with intervening filler in capacitor-forming configuration

摘要

The memory includes tubes (301) on the electrode layer (202) and in contact with it. A dielectric coating (302) covers them. Filler (403) intervenes in the spaces between them, and is connected to an opposite electrode (402). The configuration forms an electrical capacitor between the electrode layer and the opposite electrode, for charge storage. An independent claim is included for the method of manufacture.