| 摘要 |
Provided is a selective electrochemical etching method in which, when a facing electrode faces a substrate having at least one doping region on an upper surface and a contact layer on a bottom surface and a bias voltage is applied to the substrate, the doping region is selectively etched depending on a doping concentration of the doping region within a bath which contains an etchant. The bias voltage is applied to the bottom surface of the substrate, which is opposite to the upper surface on which the doping region is formed, so that a hole current is supplied to the substrate via the bottom surface of the substrate. Accordingly, a contact layer is formed on the bottom surface of a specimen so as to deliver a hole current to the substrate, whereby a more precise, more reproducible doping profile can be obtained than in a conventional electrochemical etching method.
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