| 发明名称 |
GATE-INDUCED STRAIN FOR MOS PERFORMANCE IMPROVEMENT |
| 摘要 |
There is disclosed an apparatus including a substrate (105, 115) defining an interior of the apparatus, a device exterior to the substrate including a gate electrode (130, 132), and a straining layer (213, 214) exterior to the gate electrode and exterior to the substrate. |
| 申请公布号 |
WO2004112147(A1) |
申请公布日期 |
2004.12.23 |
| 申请号 |
WO2004US20201 |
申请日期 |
2003.12.18 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HOFFMANN, THOMAS;CEA, STEPHEN;GILES, MARTIN |
| 分类号 |
H01L21/28;H01L29/10;H01L29/49;(IPC1-7):H01L29/49 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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