发明名称 |
Process of fabricating semiconductor light emitting device |
摘要 |
A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer
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申请公布号 |
US2004257632(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040889027 |
申请日期 |
2004.07.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OTSUKA NOBUYUKI;YOSHII SHIGEO;KITOH MASAHIRO;YOKOGAWA TOSHIYA |
分类号 |
G02F1/015;G02F1/017;(IPC1-7):G02F1/03;G02F1/07 |
主分类号 |
G02F1/015 |
代理机构 |
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