COMPOUND SEMICONDUCTOR, METHOD FOR PRODUCING SAME AND COMPOUND SEMICONDUCTOR DEVICE

摘要

An InGaP buffer layer (3) having a thickness of 5-500 nm is formed on a semi-insulating GaAs substrate (1) and an InAlAs layer (4) and an InGaAs channel layer (5) are formed on the InGaP buffer layer (3), thereby forming a heterostructure. Segregation of In occurs during the formation of the InGaP buffer layer (3), and excessive In are contained in the portion near the upper surface of the InGaP buffer layer (3). As a result, the composition of the surface of the InGaP buffer layer (3) is extremely close to InP composition, thereby suppressing misfit dislocations which may lead to deterioration in the surface condition. In addition, the InAlAs layer (4) and the InGaAs channel layer (5) formed on the InGaP buffer layer (3) can have good surface conditions.