发明名称 |
Susceptor gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer |
摘要 |
A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage structure having an upper stage pocket (11a) for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket (11b) formed on a lower stage of a center side from the upper stage pocket (11a). A hole (12) penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket (11b).
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申请公布号 |
US2004255843(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040493144 |
申请日期 |
2004.04.20 |
申请人 |
YOSHIDA TOMOSUKE;ARAI TAKESHI;AKIYAMA KENJI;OSE HIROKI |
发明人 |
YOSHIDA TOMOSUKE;ARAI TAKESHI;AKIYAMA KENJI;OSE HIROKI |
分类号 |
C23C16/44;C23C16/458;C30B25/12;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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