发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 <p>[PROBLEMS] The present invention aims to mount a digital circuit and an RF circuit in which an inductor is formed on a same chip. [MEANS FOR SOLVING PROBLEMS] A MOSFET (3) is formed in a region on a silicon substrate (1) which region is isolated by a device isolation film (2). A plurality of low dielectric constant insulator rods (8), in which a low dielectric constant insulating material is respectively buried, are arranged in an RF circuit region (100). The low dielectric constant insulator rods (8) reach the inside of the silicon substrate by penetrating through a first interlayer insulating film (4). An inductor (40) utilizing the multilayer wiring is formed in the interlayer insulating film on the RF circuit region (100). In the magnetic core of the inductor and a region around the core, there is formed a high magnetic permeability isolation region (19) in which a composite material obtained by mixing a high magnetic permeability material and a low dielectric constant material is buried.</p>
申请公布号 WO2004112138(A1) 申请公布日期 2004.12.23
申请号 WO2004JP08450 申请日期 2004.06.16
申请人 NEC CORPORATION;HAYASHI, YOSHIHIRO;INOUE, NAOYA;HIJIOKA, KENICHIRO 发明人 HAYASHI, YOSHIHIRO;INOUE, NAOYA;HIJIOKA, KENICHIRO
分类号 H01L21/02;H01L21/822;H01L23/522;H01L23/552;H01L27/06;H01L27/08;H01L29/06;(IPC1-7):H01L27/04;H01L21/768;H01L21/320 主分类号 H01L21/02
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