发明名称 |
OHMIC OR SCHOTTKY ELECTRODE STRUCTURE USING HETERO STRUCTURE OF METAL/SEMICONDUCTOR NANO-ROD AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: An electrode structure and a manufacturing method thereof are provided to transform a semiconductor nano-rod into an ohmic electrode or a Schottky electrode by depositing a corresponding metal on the nano-rod. CONSTITUTION: An electrode structure includes a predetermined base(10), a plurality of semiconductor nano-rods, and a metal. The plurality of semiconductor nano-rods(12) are grown on the base. The metal(14) is deposited on each nano-rod, so that an electrode structure is completed. The electrode structure presents ohmic or Schottky properties according to the work-function and interfacial characteristics between the nano-rod and the metal.
|
申请公布号 |
KR20040107700(A) |
申请公布日期 |
2004.12.23 |
申请号 |
KR20030036740 |
申请日期 |
2003.06.09 |
申请人 |
POSTECH FOUNDATION |
发明人 |
LEE, GYU CHEOL;PARK, WON IL |
分类号 |
H01L21/285;H01L21/44;H01L29/06;H01L29/22;H01L29/45;H01L29/47;H01L31/108;H01L33/20;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|