发明名称 |
SOI SHAPED STRUCTURE |
摘要 |
A silicon on insulator shaped structure formed to reduce floating body effect comprises a T-shaped active structure and a body contact for back bias. Etching a T-shape through two layers of oxide will form the T-shaped active areas. A back bias is formed when a metal line is dropped through the SOI structure and reaches a contact plug. This contact plug is doped with N+ or P+ dopant and is embedded in a Si sub-strate. The T-active shaped structure is used to reduce the short channel effects and junction capacitance that normally hinder the effectiveness of bulk transistors. The back bias is used as a conduit for generated holes to leave the SOI transistor area thus greatly reducing the floating effects generally associated with SOI structures. |
申请公布号 |
WO2004112127(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
WO2004EP06498 |
申请日期 |
2004.06.16 |
申请人 |
INFINEON TECHNOLOGIES AG;KANG, WOO-TAG |
发明人 |
KANG, WOO-TAG |
分类号 |
H01L21/336;H01L21/74;H01L21/8242;H01L21/84;H01L27/12;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|