| 摘要 |
PURPOSE:To improve the heat dissipating characteristic by forming the thickness of a die stage for placing a semiconductor element thicker than that of leads arranged on the periphery, and forming the semiconductor element placing surface of the stage substantially in the same plane as the upper surface of leads. CONSTITUTION:A semiconductor element 1 is mounted through a mounting material 2 such as a solder or a conductive adhesive on the upper surface 30a of a die stage 30, and the wire bonding surface of inner leads 5a disposed at one end near the stage 30 and electrodes formed on the element 1 are bonded to conduct therebetween with fine metal wires 4 such as gold wires. The upper surface 30a is formed substantially in the same plane as the wire bonding surface of the leads 5a. The stage 30 is supported by tie bars 6 having the same thickness as the leads 5a. The stage 30 is manufactured to be thicker than the leads 5a, and formed thickly on the opposite surface to the surface 30a of the same size as the element 1. Thus, the size can be reduced without decreasing the heat dissipating effect of a power IC. |
