发明名称 |
METHODS FOR MANUFACTURING COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR USING CHEMICAL REACTION AND DIFFUSION BY HEATING, COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR MANUFACTURED USING THE METHOD, AND PHOTOCELL, ELECTRONIC CIRCUIT, TRANSISTOR, AND MEMORY USING THE SAME |
摘要 |
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated. |
申请公布号 |
EP1488451(A1) |
申请公布日期 |
2004.12.22 |
申请号 |
EP20030713052 |
申请日期 |
2003.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
KIM, JOO-HO;TOMINAGA, JUNJI |
分类号 |
C01B33/00;H01L21/36;H01L21/26;H01L21/268;H01L21/31;H01L21/324;H01L21/768;H01L21/8242;H01L21/8247;H01L23/525;H01L27/108;H01L27/115;H01L29/12;H01L29/24;H01L29/26;H01L29/788;H01L29/792;(IPC1-7):H01L21/324 |
主分类号 |
C01B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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