发明名称 METHODS FOR MANUFACTURING COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR USING CHEMICAL REACTION AND DIFFUSION BY HEATING, COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR MANUFACTURED USING THE METHOD, AND PHOTOCELL, ELECTRONIC CIRCUIT, TRANSISTOR, AND MEMORY USING THE SAME
摘要 A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
申请公布号 EP1488451(A1) 申请公布日期 2004.12.22
申请号 EP20030713052 申请日期 2003.03.28
申请人 SAMSUNG ELECTRONICS CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 发明人 KIM, JOO-HO;TOMINAGA, JUNJI
分类号 C01B33/00;H01L21/36;H01L21/26;H01L21/268;H01L21/31;H01L21/324;H01L21/768;H01L21/8242;H01L21/8247;H01L23/525;H01L27/108;H01L27/115;H01L29/12;H01L29/24;H01L29/26;H01L29/788;H01L29/792;(IPC1-7):H01L21/324 主分类号 C01B33/00
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