Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element

摘要

A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.