Multi-level memory device and methods for programming and reading the same

摘要

A multilevel memory core includes a word line and a bit line. The multilevel memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to define multiple levels for storage where each of the multiple levels for storage is associated with a corresponding threshold voltage. Methods for reading the multilevel memory core also are described.