METHOD FOR FORMING TRENCH ISOLATION OF SEMICONDUCTOR DEVICE TO CONTROL SHORT CHANNEL EFFECT WHEN CELL TRANSISTOR OPERATES

摘要

PURPOSE: A method for forming a trench isolation of a semiconductor device is provided to control a short channel effect when a cell transistor operates by avoiding generation of an edge defect at an interface between an insulation layer pattern for filling a trench like a grooving and a semiconductor substrate, namely, at the edge part of the trench. CONSTITUTION: An etch stop layer pattern including a dual layer composed of a nitride layer pattern and a photoresist pattern is formed on a semiconductor substrate(100). A spacer(300) of a CFX-polymer exposing the semiconductor substrate to the side part of the etch stop layer pattern is formed. The exposed semiconductor substrate is etched to form a trench(400) by using the etch stop layer pattern and the spacer as a mask. The first insulation layer pattern(550) is formed to fill the trench. The etch stop layer pattern is removed to form the second insulation layer pattern covering the edge part of the trench such that the second insulation layer pattern is composed of the spacer and the first insulation layer pattern.