发明名称 Method for reducing pattern dimension in a photoresist layer
摘要 <p>A method for reducing dimensions of a resist pattern on a substrate surface which comprises the steps of: (a) coating a patterned resist layer with an aqueous coating solution containing a water-soluble resin, which is a copolymer of (meth)acrylic acid and an ethylenically unsaturated monomeric compound selected from N-vinylpyrrolidone, N-vinylimidazolidinone, methyl acrylate, methyl methacrylate, N,N-dimethylacrylamide, N,N-dimethylaminopropyl methacrylamide, N,N-dimethylaminopropyl acrylamide, N-methylacrylamide, diacetoneacrylamide, N,N-dimethylaminoethyl methacrylate, N,N-diethylaminoethyl methacrylate, N,N-dimethylaminoethyl acrylate and N-acryloylmorpholine; (b) drying the coating layer to form a dried coating layer of the water-soluble resin; (c) subjecting the dried coating layer to a heat treatment to effect thermal shrinkage of the coating layer and reduction of dimensions of the resist pattern; and (d) dissolving away the coating layer by washing with water.</p>
申请公布号 EP1489464(A2) 申请公布日期 2004.12.22
申请号 EP20040022863 申请日期 2002.06.21
申请人 JP 发明人 JP;JP;JP
分类号 H01L21/027;G03F7/40;(IPC1-7):G03F7/40 主分类号 H01L21/027
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