Method of fabrication of an unbreakable disc-shaped object and corresponding semiconductor circuit

摘要

A conductive substrate (1) is prepared with initial thickness (DA) and a saw matrix (4). Trenches (G1, G2) are formed on the front of the substrate corresponding with the matrix. At least one trench has a depth (h1, h2) exceeding the final thickness (DE1, DE2) of the thinned substrate. The channels are filled with material (SF) resisting shear stress. An electroplating mask (6) with open areas is deposited on the front of the substrate. Plating fills them. The substrate is thinned from its rear to a final thickness (DE1, DE2). An independent claim is included for the corresponding semiconductor circuit arrangement.