METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO DECREASE ANGLE OF CORNER OF GATE ELECTRODE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to decrease an angle of the corner of a gate electrode by forming the gate electrode by a dry etch process while forming a groove at the corner of the gate electrode in contact with a gate oxide layer. CONSTITUTION: A gate oxide layer(200) is formed on a semiconductor substrate(100). A conductive layer including a polysilicon layer is formed on the gate oxide layer. The conductive layer is patterned by a dry etch process using the gas including hydrogen bromide gas as etch gas to form a gate electrode(350) wherein the gate electrode and the gate oxide layer form a groove at the lower corner of the gate electrode in contact with the gate oxide layer. The gate electrode is covered with an insulation layer(500), including an oxide layer formed by a CVD(chemical vapor deposition) process.