发明名称 |
TUNNELING MAGNETORESISTANCE DEVICE, SEMICONDUCTOR JUNCTION DEVICE, MAGNETIC MEMORY, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
<p>A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element. <IMAGE></p> |
申请公布号 |
EP1489664(A1) |
申请公布日期 |
2004.12.22 |
申请号 |
EP20030712908 |
申请日期 |
2003.03.25 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
TANAKA, HIDEKAZU;KAWAI, TOMOJI |
分类号 |
H01L29/82;H01L33/26;G01R33/09;G11B5/39;G11C11/16;H01F10/32;H01L27/105;H01L29/868;H01L33/00;H01L43/08;(IPC1-7):H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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