Bipolar junction transistor and methods of manufacturing the same

摘要

A substrate has a collector region (104) of a first conductivity type, and a base layer (112) of a single crystalline structure and including impurities of a second conductivity type is located over the collector region (104). An emitter region (116) is defined at least in part by impurities of the first conductivity type contained in the base layer (112). An emitter electrode (118) of the first conductivity type contacts the emitter region (116), and at least a portion of the emitter electrode (118) which is in contact with the emitter region (116) has a single crystalline structure. <IMAGE>