BOAT FOR GROWING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To obtain a high quality single crystal of a compd. semiconductor having no surface unevenness by using the titled boat having plural specified grooves cut in the inside which is brought into contact with a molten compd. semiconductor so that air bubbles are allowed to escape from the semiconductor. CONSTITUTION:Plural straight grooves 2 are cut in the inside of a quartz glass boat 1 at 1-10mm pitch (p) to 0.2-2mm depth (d) in a direction perpendicular to the longitudinal direction of the boat 1 and a film of carbon, BN, SiC or the like is formed on the inside of the boat 1 as required. A molten compd. semiconductor such as CdTe is solidified with the boat 1 and generated air bubbles are allowed to escape from the semiconductor along the grooves 2 to grow a high quality single crystal.