发明名称 |
NROM structure |
摘要 |
A macro model of a programmable NROM for simulating the characters of the NROM under programming operation. Charges are stored in a portion of the nitride material layer to for a charge trapped region when the NROM is programmed. A normal MOS symbol element and a short channel MOS symbol element are respectively represent a MOS without having the charge trapped region and a MOS with a charge trapped region. Moreover, the normal MOS symbol element is series with the short channel MOS symbol element, wherein a source of the short channel MOS symbol element is coupled with a drain of the normal MOS symbol element.
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申请公布号 |
US6834263(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20010815129 |
申请日期 |
2001.03.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG YAO WEN;LU TAO CHENG;TSAI WEN JER |
分类号 |
G06F17/50;(IPC1-7):G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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