发明名称 |
Manufacturing method for a shallow trench isolation region with high aspect ratio |
摘要 |
A manufacturing method for a shallow trench isolation region with high aspect ratio. The method comprises the steps of providing a substrate with a trench therein, forming a first insulation layer on the substrate and inside the trench by high density plasma chemical vapor deposition (HDPCVD), removing the majority of the first insulation layer outside the trench by spray type etching, and forming a second insulation layer on the first insulation layer by low pressure CVD to fill the trench. According to the present invention, a void-free shallow trench isolation with high aspect ration can be achieved.
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申请公布号 |
US6833311(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20030426327 |
申请日期 |
2003.04.30 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HO HSIN-JUNG;WU CHANG RONG;HO TZU EN |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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