| 摘要 |
A semiconductor integrated circuit and power control method use one of a supply voltage of the circuit and a delay time of the circuit to control a substrate bias voltage applied to a substrate of an insulated gate field effect transistor. High speed operation, consuming a small amount of power, is achieved. A CMOS circuit has a widened operating voltage range, with reduced leak currents in a standby mode in a range of high supply voltage, reducing power consumption of the CMOS circuit, and increasing operating speed of the CMOS circuit in the range of low supply voltage.
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