发明名称 |
Gap-filling process |
摘要 |
A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
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申请公布号 |
US6833318(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020065803 |
申请日期 |
2002.11.20 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WENG CHUN-JEN;CHEN JUAN-YI;PAN HONG-TSZ;LEE CEDRIC;WU DER-YUAN;LIN JACKSON;YEN YEONG-SONG;LIN LAWRENCE;TSENG YING-CHUNG |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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