发明名称 Gap-filling process
摘要 A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
申请公布号 US6833318(B2) 申请公布日期 2004.12.21
申请号 US20020065803 申请日期 2002.11.20
申请人 UNITED MICROELECTRONICS CORP. 发明人 WENG CHUN-JEN;CHEN JUAN-YI;PAN HONG-TSZ;LEE CEDRIC;WU DER-YUAN;LIN JACKSON;YEN YEONG-SONG;LIN LAWRENCE;TSENG YING-CHUNG
分类号 H01L21/311;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/311
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