发明名称 Semiconductor memory having memory cells requiring refresh operation
摘要 An operation control circuit sets an inactivating timing of sense amplifiers activated in response to a read request, a write request, or a refresh request, to the timing a maximum possible quantity of signals which can be output from the sense amplifiers operating in response to the refresh request is transmitted to memory cells. Tailoring the activating period of the sense amplifiers to a refresh operation can reduce access time. A refresh control circuit generates a predetermined number of refresh requests consecutively to refresh all of the memory cells before extending the cycle of generating refresh requests. When refresh requests occur consecutively, the refresh frequency can be lowered to reduce power consumption. As a result, access time can be reduced without increasing power consumption during the standby mode.
申请公布号 US6834021(B2) 申请公布日期 2004.12.21
申请号 US20030350191 申请日期 2003.01.24
申请人 FUJITSU LIMITED 发明人 MORI KAORU;YAMADA SHINICHI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/403
代理机构 代理人
主权项
地址