| 发明名称 |
Dual cure B-stageable underfill for wafer level |
| 摘要 |
A silicon wafer has a B-stageable underfill material deposited on the active face of the wafer. The B-stageable underfill comprises a first composition with a lower curing temperature and a second composition with a higher curing temperature, characterized in that the first composition has been fully cured.
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| 申请公布号 |
US6833629(B2) |
申请公布日期 |
2004.12.21 |
| 申请号 |
US20010020638 |
申请日期 |
2001.12.14 |
| 申请人 |
NATIONAL STARCH AND CHEMICAL INVESTMENT HOLDING CORPORATION |
发明人 |
MA BODAN;HONG SUN HEE;TONG QUINN K. |
| 分类号 |
C08G59/18;H01L21/56;H01L23/12;H01L23/29;H01L23/31;(IPC1-7):H01L23/28 |
主分类号 |
C08G59/18 |
| 代理机构 |
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