发明名称 |
Latch-up resistant CMOS structure |
摘要 |
Provided with a semiconductor device including: a semiconductor substrate having a first conductivity type; a first well having a second conductivity type formed in a first region in a major surface of the semiconductor substrate; a second well having the first conductivity type formed in a second region in the major surface of the semiconductor substrate; a first MOS transistor having the first conductivity type and a first contact region having the second conductivity type formed in the first well; a second MOS transistor having the second conductivity type and a second contact region having the second conductivity type formed in the second well; a heavily doped region of buried layer having the second conductivity type formed at a portion corresponding to the first contact region in the first well; and a heavily doped region of buried layer having the first conductivity type formed at a portion corresponding to the second contact region in the second well.
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申请公布号 |
US6833592(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20010955288 |
申请日期 |
2001.09.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE JOO-HYONG |
分类号 |
H01L29/78;H01L27/092;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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