发明名称 Method for plasma etching performance enhancement
摘要 A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.
申请公布号 US6833325(B2) 申请公布日期 2004.12.21
申请号 US20020295601 申请日期 2002.11.14
申请人 LAM RESEARCH CORPORATION 发明人 HUANG ZHISONG;LI LUMIN
分类号 H01L21/311;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/311
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