发明名称 |
Method for plasma etching performance enhancement |
摘要 |
A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.
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申请公布号 |
US6833325(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020295601 |
申请日期 |
2002.11.14 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HUANG ZHISONG;LI LUMIN |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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