发明名称 |
Semiconductor device having a U-shaped gate structure |
摘要 |
A double-gate semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the gate is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The bottom surface and at least a portion of the side surfaces of the fin are surrounded by the gate. The gate material surrounding the fin has a U-shaped cross-section at a channel region of the semiconductor device.
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申请公布号 |
US6833588(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020274867 |
申请日期 |
2002.10.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;AHMED SHIBLY S.;AN JUDY XILIN;DAKSHINA-MURTHY SRIKANTESWARA;KRIVOKAPIC ZORAN;WANG HAIHONG |
分类号 |
H01L21/336;H01L29/417;H01L29/423;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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